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| 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. Sourced from Process 07. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 Value 30 25 35 30 4.5 100 -55 to +150 Units V V V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25C unless otherwise noted Characteristic 2N5088 2N5089 625 5.0 83.3 200 Max *MMBT5088 *MMBT5089 350 2.8 357 Units PD RJC RJA Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 VCB = 20 V, IE = 0 VCB = 15 V, IE = 0 VEB = 3.0 V, IC = 0 VEB = 4.5 V, IC = 0 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 30 25 35 30 50 50 50 100 V V V V nA nA nA nA ON CHARACTERISTICS hFE DC Current Gain I C = 100 A, VCE = 5.0 V I C = 1.0 mA, VCE = 5.0 V I C = 10 mA, VCE = 5.0 V* VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 10 mA, IB = 1.0 mA I C = 10 mA, VCE = 5.0 V 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 300 400 350 450 300 400 900 1200 0.5 0.8 V V SMALL SIGNAL CHARACTERISTICS fT Ccb Ceb hfe NF Current Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain Noise Figure IC = 500 A,VCE = 5.0 mA, f = 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VBE = 0.5 V, I C = 0, f = 100 kHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 100 A, VCE = 5.0 V, RS = 10 k, f = 10 Hz to 15.7 kHz 2N5088 2N5089 2N5088 2N5089 350 450 50 4.0 10 1400 1800 3.0 2.0 MHz pF pF dB dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) DC Typical Characteristics V - COLLECTOR-EMITTER VOLTAGE (V) CESAT h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 400 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) P 07 - 40 C 25 C 125 C Vce=5V Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 125 C = 10 0.15 0.1 0.05 0.1 25 C - 40 C 100 1 10 I C - COLLECTOR CURRENT (mA) P0 100 V - COLLECTOR-EMITTER VOLTAGE (V) BESAT 1 V - BASE-EMITTER ON VOLTAGE (V) BEON Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 V CE = 5V 0.2 0.1 1 10 IC - COLLECTOR CURRENT (mA) 40 0.8 0.6 0.4 - 40 C 25 C 125 C - 40 C 25 C 125 C = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P0 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 10 VCB = 45V 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) P0 150 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) AC Typical Characteristics Input / Output Capacitance vs. Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (fT) Normalized Collector Cutoff Current vs. Ambient Temperature Wideband Noise Figure vs. Source Resistance Noise Figure vs. Frequency Contours of Constant Narrow Band Noise Figure 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) AC Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure Contours of Constant Narrow Band Noise Figure Contours of Constant Narrow Band Noise Figure Maximum Power Dissipation vs. Ambient Temperature 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0 kHz) |
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